Ultrahigh anharmonicity low-permittivity tunable nanocrystalline thin-film BaTi2O5

被引:1
作者
Falmbigl, Matthias [1 ]
Golovina, Iryna S. [1 ]
Hawley, Christopher J. [1 ]
Plokhikh, Aleksandr, V [1 ]
Shafir, Or [2 ]
Grinberg, Ilya [2 ]
Spanier, Jonathan E. [1 ,3 ]
机构
[1] Drexel Univ, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA
[2] Bar Ilan Univ, Dept Chem, IL-5290002 Ramat Gan, Israel
[3] Drexel Univ, Dept Mech Engn & Mech, Philadelphia, PA 19104 USA
基金
美国国家科学基金会;
关键词
BaTi2O5 thin films; Ferroelectric; Dielectric properties; Atomic layer deposition; Density functional theory; Tunability; ATOMIC LAYER DEPOSITION; FERROELECTRIC BATI2O5; BARIUM-TITANATE;
D O I
10.1016/j.actamat.2021.116712
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Electrically tunable dielectric thin films in active circuits and systems are challenged by capacitance-induced delays and impedance matching requiring a lower dielectric constant. Here an approach to increasing the intrinsic tunability of compounds containing TiO6 octahedra by considering the influence of different connectivity among these octahedra is presented. Such connectivity variants in nanocrystalline monoclinic BaTi2O5 thin films enable a two orders of magnitude enhancement in Ti anharmonic interaction, thereby permitting a approximate to 65% decrease in dielectric constant to 70 at room temperature without sacrificing tunability. Edge-sharing TiO6 octahedra possess a much shorter Ti-Ti distance of only 2.91 angstrom as compared to the perovskite structure (similar to 4 angstrom), permitting large field-induced structural re-arrangement and intrinsic tunability. (C) 2021 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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页数:7
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