Boron redistribution during crystallization of phosphorus-doped amorphous silicon

被引：0

作者：

Simola, R. ^{[1
,2
]}

Mangelinck, D. ^{[2
]}

Portavoce, A. ^{[2
]}

Bernardini, J. ^{[2
]}

Fornara, P. ^{[2
]}

机构：

[1] Fac Sci & Tech St Jerome, L2MP, CNRS, UMR 6137, Case 142, F-13397 Marseille 13, France

[2] ST Microelect, F-13790 Rousset, France

来源：

ION IMPLANTATION TECHNOLOGY | 2006年 / 866卷

关键词：

boron; phosphorus; amorphous silicon; crystallization; diffusion;

D O I：

暂无

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The redistribution of boron has been studied during solid phase crystallization (SPC) of a homogeneous phosphorus-doped amorphous silicon layer deposited by low pressure chemical vapor deposition, for different thermal annealing. We show that for the lower temperature annealing (T = 586 degrees C, 1h) boron diffuses without changing the P profile, while for the higher temperature annealing (T = 800 degrees C, 3h), the initially homogeneous P profile is modified, showing two concentration peaks.

引用

页码：125 / +

页数：2

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