Spin injection with Fe/InAs hybrid structure

被引：0

作者：

Ohno, H ^{[1
]}

Yoh, K

Katano, Y

Sueoka, K

Mukasa, K

机构：

[1] Hokkaido Univ, Grad Sch Engn, Sapporo, Hokkaido 0608628, Japan

[2] Hokkaido Univ, RCIQE, Sapporo, Hokkaido 0608628, Japan

来源：

COMPOUND SEMICONDUCTORS 2001 | 2002年 / 170期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have succeeded in injection of spin-polarized electrons from Fe thin film into InAs. Fe thin film was grown by molecular beam epitaxy (MBE) on InAs(100) substrate at 23 degreesC. The Fe/InAs hybrid structure showed decent magnetic and electronic property. The spin polarization of injected electrons was estimated from the polarization of electroluminesce. 3.6 similar to 4.1% of polarization of the luminescence was obtained. Present result of the highest spin injection efficiency to date indicates that the present ferromagnet/InAs hybrid system is promising for spintronics applications.

引用

页码：275 / 280

页数：6

共 11 条

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