Investigation of self-assembled monolayer treatment on SiO2 gate insulator of poly (3-hexylthiophene) thin-film transistors

被引：45

作者：

Horii, Yoshinori ^{[1
,5
]}

Ikawa, Mitsuhiro ^{[1
]}

Sakaguchi, Koichi ^{[1
]}

Chikamatsu, Masayuki ^{[1
]}

Yoshida, Yuji ^{[1
]}

Azumi, Reiko ^{[1
]}

Mogi, Hiroshi ^{[2
,3
]}

Kitagawa, Masahiko ^{[4
]}

Konishi, Hisatoshi ^{[5
]}

Yase, Kiyoshi ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Photon Res Inst, Tsukuba, Ibaraki 3058565, Japan

[2] JCII, Chiyoda Ku, Tokyo 1010051, Japan

[3] Shin Etsu Chem, Annaka, Gunma 3790224, Japan

[4] Tottori Univ, Grad Sch Engn, Dept Informat & Elect, Tottori 6808552, Japan

[5] Tottori Univ, Grad Sch Engn, Dept Chem & Biotechnol, Tottori 6808552, Japan

来源：

THIN SOLID FILMS | 2009年 / 518卷 / 02期

关键词：

Organic field-effect transistor; Organic thin-film transistor; Poly(3-hexylthiophene); Self-assembled monolayer; Docosyltrichlorosilane; FIELD-EFFECT TRANSISTORS; REGIOREGULAR POLY(3-HEXYLTHIOPHENE); MOBILITY; TRANSPORT;

D O I：

10.1016/j.tsf.2009.07.060

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated self-assembled monolayer (SAM) treatment on SiO2 gate insulator of poly(3-hexylthiophene) (P3HT) thin-film transistor (TFT), and demonstrated a correlation between mobility and surface free energy of the insulator. The device with lower surface free energy shows higher mobility. The docosyltrichlorosilane (DCTS)-treated device exhibits the best performance among the various SAM-treated devices examined. Field-effect mobility, on/off ratio and threshold voltage of the DCTS-treated P3HT TFT were 0.015 cm(2)/VS, >10(5) and -14 V, respectively. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：642 / 646

页数：5

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