α-Ga2O3 Nanorod Array-Cu2O Microsphere p-n Junctions for Self-Powered Spectrum-Distinguishable Photodetectors

被引：150

作者：

He, Chenran ^{[1
,2
]}

Guo, Daoyou ^{[1
,2
,3
,4
]}

Chen, Kai ^{[1
,2
]}

Wang, Shunli ^{[1
,2
]}

Shen, Jingqin ^{[1
,2
]}

Zhao, Nie ^{[5
]}

Liu, Aiping ^{[1
,2
]}

Zheng, Yingying ^{[1
,2
]}

Li, Peigang ^{[3
,4
]}

Wu, Zhenping ^{[3
,4
]}

Li, Chaorong ^{[1
,2
]}

Wu, Fengmin ^{[1
,2
]}

Tang, Weihua ^{[3
,4
]}

机构：

[1] Zhejiang Sci Tech Univ, Dept Phys, Ctr Optoelect Mat & Devices, Hangzhou 310018, Zhejiang, Peoples R China

[2] Zhejiang Sci Tech Univ, Dept Phys, Key Lab Opt Field Manipulat Zhejiang Prov, Hangzhou 310018, Zhejiang, Peoples R China

[3] Beijing Univ Posts & Telecommun, Sch Sci, Lab Informat Funct Mat & Devices, Beijing 100876, Peoples R China

[4] Beijing Univ Posts & Telecommun, Sch Sci, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China

[5] Xiangtan Univ, Coll Mat Sci & Engn, Xiangtan 411105, Peoples R China

来源：

ACS APPLIED NANO MATERIALS | 2019年 / 2卷 / 07期

基金：

中国国家自然科学基金;

关键词：

p-n junction; Ga2O3/Cu2O; solid/liquid junction; spectrum-distinguishable; self-powered; TRIBOELECTRIC NANOGENERATOR; HIGHLY-EFFICIENT; PERFORMANCE; BETA-GA2O3; SENSITIVITY; FABRICATION; NANOSHEETS; CU2O/ZNO; CELL;

D O I：

10.1021/acsanm.9b00527

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Most of the photodetectors can measure all of the light illumination with a wavelength below the absorption edge of the detector materials, while they cannot distinguish the different waveband. Herein, a self-powered spectrum distinguishable photoelectrochemical (PEC) type photo detector based on an alpha-Ga2O3 nanorod array (NA)/Cu2O microsphere (MS) p-n junction was reported. Under the combined action of the built-in electric field of the p-n junction and the semiconductor/electrolyte junction, the photodetector exhibits an opposite direction of the photo current to the illumination of 254 and 365 nm UV light under the applied bias of 0 V, which can be used to distinguish the different wavelengths of light. The photodetector shows a responsivity of 0.42 mA/W under 254 nm UV light and 0.57 mA/W upon 365 nm, respectively. Our results provide an idea for distinguishing the different illumination wavebands through a photodetector constructed by the heterojunction with two different band gap materials.

引用

页码：4095 / 4103

页数：17

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