Titanium Nitriding by Microwave Atmospheric Pressure Plasma: Towards Single Crystal Synthesis

被引：8

作者：

Cardoso, R. P. ^{[1
]}

Arnoult, G. ^{[1
]}

Belmonte, Thierry ^{[1
]}

Henrion, G. ^{[1
]}

Weber, Sylvian ^{[2
]}

机构：

[1] Nancy Univ, CNRS, Lab Sci & Genie Surfaces, F-54042 Nancy, France

[2] Nancy Univ, CNRS, Phys Mat Lab, F-54042 Nancy, France

来源：

PLASMA PROCESSES AND POLYMERS | 2009年 / 6卷

关键词：

TI-N SYSTEM; NITROGEN DIFFUSION; TEMPERATURE; NITRIDATION; TI-6AL-4V; PYROMETRY; DISCHARGE; GROWTH;

D O I：

10.1002/ppap.200930704

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High temperature titanium nitriding is achieved by plasmas sustained at atmospheric pressure in a microwave resonant cavity. TiN layers produced in the temperature range (1475-1980 K) present a grain orientation that is mainly defined by initial grain orientation of the titanium substrate. Coarsening pretreatments on the titanium samples before nitriding allows the synthesis of a strongly oriented TiN layer. The TiN + alpha-Ti layer thickness reaches about 116 mu m after a 1 h treatment at 1760 K. For these treatment times, the bulk material is not totally transformed into TiN, but this is a first step towards the synthesis of single crystals of TiN from commercial-grade pure titanium.

引用

页码：S302 / S305

页数：4

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