A novel structure ZnO-Fe-ZnO thin film memristor

被引：19

作者：

Santos, Y. P. ^{[1
]}

Valenca, E. ^{[1
]}

Machado, R. ^{[1
]}

Macedo, M. A. ^{[1
]}

机构：

[1] Univ Fed Sergipe, Phys Dept, BR-49100000 Sao Cristovao, SE, Brazil

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2018年 / 86卷

关键词：

Memristor; Thin film; Nanoelectronics; Multilayer; ZnO; ZnO-Fe-ZnO; CONDUCTION MECHANISM; OXIDE; REFLECTION; BEHAVIOR; LAYER;

D O I：

10.1016/j.mssp.2018.06.016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The memristor behavior of thin films having a multilayer Pt/ZnO/Fe/ZnO/ITO structure, deposited using RF/DC magnetron sputtering, was studied. The iron layer between the ZnO layers facilitates the change in the resistance of the device through the oxidation of the iron at the ZnO/Fe interface, thus generating oxygen vacancies and providing electrons from the redox reaction between gamma-Fe2O3 and Fe3O4. The main mechanisms of conduction include Poole-Frenkel emission and Fowler-Nordhein tunneling with the ion migration, oxygen vacancies, and redox reactions of iron oxides (gamma-Fe2O3 and Fe3O4). The response of the device to sequential voltage pulses in terms of variation in resistance, R-ERASE/R-WRITE ratio, retention time, and control of the resistance state, through control of the applied voltage, was also evaluated.

引用

页码：43 / 48

页数：6

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