Fabrication of niobium SIS junctions with a magnetic tunneling barrier NiOx

被引:4
|
作者
Seko, K [1 ]
Ichikawa, Y [1 ]
Terajima, R [1 ]
Sakai, J [1 ]
Imai, S [1 ]
机构
[1] Japan Adv Inst Sci & Technol, Sch Mat Sci, Tatsunokuchi, Ishikawa 9231292, Japan
来源
关键词
SIS tunnel junction; mixer; magnetic barrier; Josephson current; current-voltage curve; Nb; NiOx; Al;
D O I
10.1016/S0921-4534(02)01704-5
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on the fabrication of a new type of superconductor-insulator-superconductor junctions with intrinsically vanishing Josephson current. We have fabricated junctions with a tunneling barrier containing oxidized 3d transition metal Ni, i.e., Nb/NiOx/Nb and Nb/NiOx/Al/Nb stacked junctions. In the junction fabrication process, we used a conventional RIE technique called selective niobium etch process. The junction size was varied from 2.5 x 2.5 to 10 x 10 mum(2). The Josephson current of these junctions was suppressed to zero or nearly zero, while a sharp gap structure was also observed. This new-type device will be promising in realizing a highly integrated mixer. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:1310 / 1313
页数:4
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