Single-ion anisotropy in Mn-doped diluted magnetic semiconductors

被引：12

作者：

Savoyant, A. ^{[1
]}

Stepanov, A. ^{[1
]}

Kuzian, R. ^{[2
]}

Deparis, C. ^{[3
]}

Morhain, C. ^{[3
]}

Grasza, K. ^{[4
]}

机构：

[1] Univ Paul Cezanne, IM2NP, FST, CNRS,UMR 6242, F-13397 Marseille 20, France

[2] Inst Mat Sci Agh, UA-03180 Kiev, Ukraine

[3] CNRS, Ctr Rech Heteroepitaxie & Ses Applicat, F-06560 Valbonne, France

[4] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

PHYSICAL REVIEW B | 2009年 / 80卷 / 11期

关键词：

CRYSTALS; FIELD;

D O I：

10.1103/PhysRevB.80.115203

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Motivated by recent developments in spintronics, we propose an explanation of the single-ion anisotropy of Mn-doped diluted magnetic semiconductors using as an example high-quality ZnO: Mn thin films for which X-band electron-paramagnetic-resonance studies were performed. We derive an analytic formula for the axial parameter D and we prove its validity by the exact diagonalization method. We demonstrate a quantitative agreement between the experimental data and our model. These results bring insights into a long-standing problem of single-ion anisotropy in magnetic solids.

引用

页数：5

共 30 条

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