High-Temperature Coplanar Transformer

被引：1

作者：

Semard, Maxime ^{[1
]}

Martin, Christian ^{[1
]}

Buttay, Cyril ^{[1
]}

Joubert, Charles ^{[1
]}

机构：

[1] Univ Claude Bernard Lyon 1, Univ Lyon, INSA Lyon, Ecole Cent Lyon,CNRS UMR 5005,Ampere, F-69622 Villeurbanne, France

来源：

2018 IEEE INTERNATIONAL CONFERENCE ON INDUSTRIAL TECHNOLOGY (ICIT) | 2018年

关键词：

Transformer; microfabrication; thick film inductors; PLANAR INDUCTORS;

D O I：

10.1109/ICIT.2018.8352268

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Power electronics tends to go higher in frequency and higher in power density. This requires integrated transformers which are able to withstand high temperature (over 200 degrees C). This paper addresses the manufacturing and test of low power transformers used for the isolation in gate circuits power supplies. The transformers are built from a magnetic substrate (ferrite) using a microfabrication process detailed in the paper. The presented transformers are intended for power below 1 W, voltage circa 10 V, switching frequency of 1 MHz, temperature ranging from -55 degrees C to 200 degrees C and an isolation capacitance below 10 pF.

引用

页码：730 / 735

页数：6

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