Room temperature bonding of GaN on diamond wafers by using Mo/Au nano-layer for high-power semiconductor devices

被引：31

作者：

Wang, Kang ^{[1
]}

Ruan, Kun ^{[1
]}

Hu, Wenbo ^{[1
]}

Wu, Shengli ^{[1
]}

Wang, Hongxing ^{[1
]}

机构：

[1] Xi An Jiao Tong Univ, Sch Elect Sci & Engn, Minist Educ, Key Lab Phys Elect & Devices, 28 Xianning West Rd, Xian 710049, Shaanxi, Peoples R China

来源：

SCRIPTA MATERIALIA | 2020年 / 174卷

关键词：

GaN-on-diamond; Mo/Au nano-layer; Bonding; High-power devices; ALGAN/GAN HEMTS; SI SUBSTRATE; FILMS; DENSITY;

D O I：

10.1016/j.scriptamat.2019.08.029

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

For overcoming the heat dissipation problem of GaN-based high-power semiconductor devices, GaN wafers were bonded on polycrystalline and single-crystalline diamond wafers by using Mo/Au nano-layer at room temperature. Mo/Au double layers (similar to 5 nm/11 nm) were deposited on the surfaces of GaN and diamond wafers. The scanning acoustic microscope (SAM) analyzation and tensile strength testing results show that a low voidage of <= 1.5% can be obtained for Mo/Au nano-layer, along with a bonding strength of 6.8 MPa. In addition, the thermal-impact-resistance performance was evaluated with thermal cycling testing. (C) 2019 Acta Materialia Inc Published by Elsevier Ltd. All rights reserved.

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收藏

页码：87 / 90

页数：4

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