Deuterium permeation through SiO2 thin film deposited on stainless steel substrate

被引：13

作者：

Checchetto, R ^{[1
]}

Gratton, LM ^{[1
]}

Miotello, A ^{[1
]}

Tosello, C ^{[1
]}

机构：

[1] UNIV TRENT, DIPARTIMENTO FIS, I-38050 POVO, TN, ITALY

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1997年 / 216卷

关键词：

D O I：

10.1016/S0022-3093(97)00173-7

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The diffusivity of deuterium in low temperature deposited silicon oxide thin films has been studied in the temperature interval from 485 to 655 K using a D-2 gas phase permeation technique. The measured deuterium diffusion coefficient varies from (5.8 +/- 2.0) x 10(-14) cm(2)/s at 485 K to (5.1 +/- 1.8) x 10(-13) cm(2)/s at 655 K and has an activation energy of 0.34 +/- 0.02 eV in the entire temperature range with a pre-exponential factor of the order of 10(-10) cm(2)/s. Grain boundary diffusion through the polycrystalline silicon oxide thin film is suggested to be the rate limiting factor in the deuterium transport process. (C) 1997 Elsevier Science B.V.

引用

页码：65 / 70

页数：6

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