Surface modification of InAs(110) surface by low energy ion sputtering

被引：17
作者：
Martinelli, V
Siller, L
Betti, MG
Mariani, C
delPennino, U
机构：
[1] Ist. Naz. per la Fis. della Materia, Dipartimento di Fisica, Università di Modena, I-41100 Modena
[2] Nanoscale Phys. Research Laboratory, School of Physics and Space Research, University of Birmingham, Edgbaston
来源：
SURFACE SCIENCE | 1997年 / 391卷 / 1-3期
关键词：
Auger electron spectroscopy; indium arsenide; ion bombardment; photoelectron spectroscopy; single crystal surfaces; surface defects; surface electronic phenomena;
D O I：
10.1016/S0039-6028(97)00456-1
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Sputter-induced electronic stales and stoichiometry at the low ion-energy sputter-annealed InAs(110) surface compared to cleaved InAs(110) have been studied by Auger and UV photoelectron spectroscopy. Sputtering modifies the surface electronic structure even with 0.5 keV Ar+ ions. In particular, InAs(110) surface states are quenched, while sputter-induced electronic states in the band gap close to the Fermi level are present. After the sputtering process a variation of the In bonding coordination is observed in the surface and subsurface region while maintaining the correct average stoichiometry. Subsequent annealing induces a reordering process and a light accumulation layer in the subsurface region. (C) 1997 Elsevier Science B.V.
引用
收藏
页码：73 / 80
页数：8
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