Liquid phase reflectivity under conditions of laser-induced silicon melting

被引：8

作者：

Ivlev, GD ^{[1
]}

Gatskevich, EI ^{[1
]}

机构：

[1] Belarussian Acad Sci, Inst Elect, Minsk 220090, BELARUS

来源：

SEMICONDUCTORS | 2000年 / 34卷 / 07期

关键词：

D O I：

10.1134/1.1188068

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Dynamics of liquid silicon reflectivity at the wavelength of 0.63 mu m is investigated under conditions of single-pulse heating of the semiconductor surface with ultraviolet radiation of an ArF excimer laser. The dependence of the reflectivity at the instant of maximum heating of the surface on the power density of the laser pulse is found. It is shown that the temperature-related reduction in reflectivity is most pronounced if the surface is overheated well above the equilibrium boiling point for silicon. The possible overheating of the liquid phase close to the ablation energy threshold is about 1500 K. (C) 2000 MAIK "Nauka / Interperiodica".

引用

页码：759 / 762

页数：4

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