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- [41] A D-band CMOS Power Amplifier for Wireless Chip-to-Chip Communications with 22.3 dB Gain and 12.2 dBm P1dB in 65-nm CMOS Technology 2018 IEEE TOPICAL CONFERENCE ON RF/MICROWAVE POWER AMPLIFIERS FOR RADIO AND WIRELESS APPLICATIONS (PAWR), 2018, : 35 - 38
- [42] A CMOS 180nm Class-AB Power Amplifier with Intergrated Phase Linearizer for BLE 4.0 Achieving 11.5dB Gain, 3 8.4% PAE and 20dBm OIP3 2017 IEEE ASIA PACIFIC CONFERENCE ON POSTGRADUATE RESEARCH IN MICROELECTRONICS AND ELECTRONICS (PRIMEASIA), 2017, : 61 - 64
- [43] A High-Efficiency 5G K/Ka-Band Stacked Power Amplifier in 45nm CMOS SOI Process Supporting 9Gb/s 64-QAM Modulation with 22.4% Average PAE PROCEEDINGS OF THE 2017 TEXAS SYMPOSIUM ON WIRELESS AND MICROWAVE CIRCUITS AND SYSTEMS (WMCS), 2017,