A 28.1dBm class-D outphasing power amplifier in 45nm LP digital CMOS

被引:0
|
作者
Xu, H. [1 ]
Palaskas, Y. [1 ]
Ravi, A. [1 ]
Sajadieh, M. [1 ]
Elmala, M. [1 ]
Soumyanath, K. [1 ]
机构
[1] Intel Corp, Commun Circuits Lab, Hillsboro, OR 97124 USA
来源
2009 SYMPOSIUM ON VLSI CIRCUITS, DIGEST OF TECHNICAL PAPERS | 2009年
关键词
outphasing; WiMAX; power amplifier; class-D;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A 2.25GHz outphasing power amplifier is implemented in a 45nm LP digital CMOS process. The PA is designed in class-D mode for low output impedance and good linearity. The PA delivers 28.1dBm peak CW power with 19.7% system efficiency (includes all drivers). Average OFDM power is 21.4/20.3dBm with efficiency 8.0/6.5% when transmitting WiFi/WiMAX signals respectively.
引用
收藏
页码:206 / 207
页数:2
相关论文
共 43 条
  • [21] A W-band Stacked FET Power Amplifier with 17 dBm Psat in 45-nm SOI CMOS
    Jayamon, Jefy
    Agah, Amir
    Hanafi, Bassel
    Dabag, Hayg
    Buckwalter, James
    Asbeck, Peter
    2013 IEEE TOPICAL CONFERENCE ON BIOMEDICAL WIRELESS TECHNOLOGIES, NETWORKS, AND SENSING SYSTEMS (BIOWIRELESS), 2013, : 79 - 81
  • [22] A 14-GHz, 22-dBm Series Doherty Power Amplifier in 45-nm CMOS SOI
    Levy, Cooper S.
    Vorapipat, Voravit
    Buckwalter, James F.
    2016 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS), 2016, : 142 - 145
  • [23] A W-band Stacked FET Power Amplifier with 17 dBm Psat in 45-nm SOI CMOS
    Jayamon, Jefy
    Agah, Amir
    Hanafi, Bassel
    Dabag, Hayg
    Buckwalter, James
    Asbeck, Peter
    2013 IEEE 13TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF), 2013, : 156 - 158
  • [24] A W-band Stacked FET Power Amplifier with 17 dBm Psat in 45-nm SOI CMOS
    Jayamon, Jefy
    Agah, Amir
    Hanafi, Bassel
    Dabag, Hayg
    Buckwalter, James
    Asbeck, Peter
    2013 IEEE TOPICAL CONFERENCE ON POWER AMPLIFIERS FOR WIRELESS AND RADIO APPLICATIONS (PAWR), 2013, : 85 - 87
  • [25] A W-band Stacked FET Power Amplifier with 17 dBm Psat in 45-nm SOI CMOS
    Jayamon, Jefy
    Agah, Amir
    Hanafi, Bassel
    Dabag, Hayg
    Buckwalter, James
    Asbeck, Peter
    2013 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS), 2013, : 256 - 258
  • [26] A COMPACT, 36 TO 72 GHz 15.8 dBm POWER AMPLIFIER WITH 66.7% FRACTIONAL BANDWIDTH IN 45 nm SOI CMOS
    Tai, Wei
    Ricketts, David S.
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2014, 56 (01) : 166 - 169
  • [27] A Class-D Tri-Phasing CMOS Power Amplifier With an Extended Marchand-Balun Power Combiner
    Martelius, Mikko
    Stadius, Kari
    Lemberg, Jerry
    Roverato, Enrico
    Nieminen, Tero
    Antonov, Yury
    Anttila, Lauri
    Valkama, Mikko
    Kosunen, Marko
    Ryynanen, Jussi
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2020, 68 (03) : 1022 - 1034
  • [28] A Dual-Level and Dual-Band Class-D CMOS Power Amplifier for IoT Applications
    Cui, Jianhui
    Zhang, Ke
    Tian, Tong
    2013 IEEE 11TH INTERNATIONAL NEW CIRCUITS AND SYSTEMS CONFERENCE (NEWCAS), 2013,
  • [29] A 130-151 GHz 8-Way Power Amplifier with 16.8-17.5 dBm Psat and 11.7-13.4% PAE Using CMOS 45nm RFSOI
    Li, Siwei
    Rebeiz, Gabriel M.
    2021 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC), 2021, : 115 - 118
  • [30] A Compact 2.4GHz Polar/Quadrature Reconfigurable Digital Power Amplifier in 28nm Logic LP CMOS
    Zhu, Yiting
    Xiong, Liang
    Yin, Yun
    Luo, Wei
    Chen, Bowen
    Li, Tong
    Xu, Hongtao
    2018 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC), 2018,