Improving Performance by Doping Gadolinium Into the Indium-Tin-Oxide Electrode in HfO2-Based Resistive Random Access Memory

被引：29

作者：

Chen, Po-Hsun ^{[1
]}

Chang, Kuan-Chang ^{[1
]}

Chang, Ting-Chang ^{[1
,2
]}

Tsai, Tsung-Ming ^{[3
]}

Pan, Chih-Hung ^{[3
]}

Lin, Chih-Yang ^{[1
]}

Jin, Fu-Yuan ^{[1
]}

Chen, Min-Chen ^{[1
]}

Huang, Hui-Chun ^{[3
]}

Wang, Ming-Hui ^{[4
]}

Lo, Ikai ^{[1
]}

Zheng, Jin-Cheng ^{[5
]}

Sze, Simon M. ^{[6
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[2] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 700, Taiwan

[3] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 804, Taiwan

[4] Natl Kaohsiung Normal Univ, Dept Chem, Kaohsiung 824, Taiwan

[5] Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China

[6] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 05期

关键词：

Resistive random access memory (RRAM); indium-tin-oxide (ITO); gadolinium (Gd); electrode; OXYGEN; RRAM;

D O I：

10.1109/LED.2016.2548499

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter investigates the characteristics of doping gadolinium (Gd) in an indium-tin-oxide (ITO) electrode in HfO2-based resistive random access memory (RRAM). Identical bottom electrodes and insulators were made but then capped by either pure ITO or a Gd: ITO top electrode. Doping Gd in the ITO electrode produces lower operation currents in both high-resistance state (HRS) and low-resistance state (LRS) as well as enlarging the memory window. This excellent performance suggests a remarkable potential to improve RRAM applications. Schottky emission mechanism dominates both HRS and LRS according to current fitting results, and is confirmed by temperature effect experiments. The resistive switching behavior of the Gd:ITO device is explained by our model and is also confirmed by material analysis and electrical measurements. Furthermore, reliability tests verify the Gd: ITO device's capability to perform data storage as a nonvolatile memory.

引用

页码：584 / 587

页数：4

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