Hole perpendicular transport in GaAs-AlGaAs superlattices

被引：0
|
作者：
Dong, B [1 ]
Lei, XL [1 ]
机构：
[1] CHINESE ACAD SCI,SHANGHAI INST MET,SHANGHAI 200050,PEOPLES R CHINA
来源：
APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 07期
关键词：
D O I：
10.1063/1.118299
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigate the hole perpendicular transport properties in semiconductor superlattices (SLs) by using the extended Lei-Ting balance equation theory for an arbitrary energy band including hole-impurity, hole-polar-optic-phonon, and hole-nonpolar-optic-phonon scatterings. Effects of heavy-hole-light-hole mixing are taken into account by means of the approximate dispersion relation suggested by O. E. Raichev [Phys. Rev. B 50, 5382 (1994)]. Numerical calculations show that the complex hole energy spectrum causes a breakdown of the negative differential conductance for the hot-hole perpendicular transport in SLs in contrast with the results corresponding to a simplified electronlike energy spectrum. (C) 1997 American Institute of Physics.
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收藏
页码：862 / 864
页数：3
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