Intrinsic asymmetric ferroelectricity induced giant electroresistance in ZnO/BaTiO3 superlattice

被引:3
作者
Yuan, Ye [1 ]
Fang, Yue-Wen [2 ,3 ]
Zhao, Yi-Feng [1 ]
Duan, Chun-Gang [1 ,4 ]
机构
[1] East China Normal Univ, Dept Elect, State Key Lab Precis Spect, Key Lab Polar Mat & Devices,Minist Educ, Shanghai 200241, Peoples R China
[2] Tokyo Inst Technol, Inst Innovat Res, Lab Mat & Struct, Midori Ku, 4259 Nagatsuta, Yokohama, Kanagawa 2268503, Japan
[3] Tokyo Inst Technol, Inst Innovat Res, World Res Hub Initiat, Midori Ku, 4259 Nagatsuta, Yokohama, Kanagawa 2268503, Japan
[4] Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Shanxi, Peoples R China
关键词
TUNNEL-JUNCTIONS;
D O I
10.1039/d0ra09228b
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Here, we combine the piezoelectric wurtzite ZnO and the ferroelectric (111) BaTiO3 as a hexagonal closed-packed structure and report a systematic theoretical study on the ferroelectric behavior induced by the interface of ZnO/BaTiO3 films and the transport properties between the SrRuO3 electrodes. The parallel and antiparallel polarizations of ZnO and BaTiO3 can lead to intrinsic asymmetric ferroelectricity in the ZnO/BaTiO3 superlattice. Using first-principles calculations we demonstrate four different configurations for the ZnO/BaTiO3/ZnO superlattice with respective terminations and find one most favorable for the stable existence of asymmetric ferroelectricity in thin films with thickness less than 4 nm. Combining density functional theory calculations with non equilibrium Green's function formalism, we investigate the electron transport properties of SrRuO3/ZnO/BaTiO3/ZnO/SrRuO3 FTJ and SrRuO3/ZnO/BaTiO3/SrRuO3 FTJ, and reveal a high TER effect of 581% and 112% respectively. These findings provide an important insight into the understanding of how the interface affects the polarization in the ZnO/BaTiO3 superlattice and may suggest a controllable and unambiguous way to build ferroelectric and multiferroic tunnel junctions.
引用
收藏
页码:2353 / 2358
页数:6
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