Quasistationary current contributions in electronic devices

被引：11

作者：

Neyts, K. ^{[1
]}

Beeckman, J. ^{[1
]}

Beunis, F. ^{[1
]}

机构：

[1] Univ Ghent, Elect & Informat Syst Dept, B-9000 Ghent, Belgium

来源：

OPTO-ELECTRONICS REVIEW | 2007年 / 15卷 / 01期

关键词：

Shockley-Ramo theorem; conduction current; capacitive current; liquid crystal; flux tube;

D O I：

10.2478/s11772-006-0054-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In an electronic device, the current supplied to the electiodes is related to different types of processes inside the device: current density, change in spontaneous Polarization, and change in dielectfic properties. Two expressions for the electrode cull rent are derived: one is based on the time derivative of the Shockley-Ramo theorem, the other on the time derivative of the dielectfic tensor This result is illustrated for a switching liquid crystal device and a two-dimensional flux tube.

引用

页码：41 / 46

页数：6

共 9 条

[1] Adequate measuring techniques for ions in liquid crystal layers [J].

Colpaert, C ;

Maximus, B ;

DeMeyere, A .

LIQUID CRYSTALS, 1996, 21 (01) :133-142

[2] THE VALIDITY OF RAMOS THEOREM [J].

DEVISSCHERE, P .

SOLID-STATE ELECTRONICS, 1990, 33 (04) :455-459

[3] Review of the Shockley-Ramo theorem and its application in semiconductor gamma-ray detectors [J].

He, Z .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2001, 463 (1-2) :250-267

[4] Lateral ion transport in nematic liquid-crystal devices [J].

Neyts, K ;

Vermael, S ;

Desimpel, C ;

Stojmenovik, G ;

Verschueren, ARM ;

de Boer, DKG ;

Snijkers, R ;

Machiels, P ;

van Brandenburg, A .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (06) :3891-3896

[5] Electrical modeling of interface roughness in thin film electroluminescent devices [J].

Neyts, K ;

De Visschere, PMJ ;

Soenen, B ;

Stuyven, G .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (02) :318-325

[6] TRANSIENT CONDUCTION OF WEAKLY DISSOCIATING SPECIES IN DIELECTRIC FLUIDS [J].

NOVOTNY, V ;

HOPPER, MA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) :925-929

[7]

Ramot S.R.E., 1939, Proc. IRE, V27, P584, DOI [DOI 10.1109/JRPROC.1939.228757, 10.1109/JRPROC.1939.228757]

[8] GENERALIZATION OF RAMO THEOREM AND ITS APPLICATION TO SEMICONDUCTING MATERIALS [J].

SATO, K ;

TAKAHASHI, M ;

TAKANO, H ;

HASHIMOTO, H ;

NIIKURA, Y ;

MATSUMOTO, T ;

RUTCHANAPHIT, P .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (4A) :2057-2061

[9]

Zhang H, 2001, MOL CRYST LIQ CRYST, V368, P3913

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