High-performance InGaP/InGaAs/GaAs step-compositioned doped-channel field-effect transistor (SCDCFET)

被引：38

作者：

Laih, LW ^{[1
]}

Cheng, SY ^{[1
]}

Wang, WC ^{[1
]}

Lin, PH ^{[1
]}

Chen, JY ^{[1
]}

Liu, WC ^{[1
]}

Lin, W ^{[1
]}

机构：

[1] DGT,TELECOMMUN LABS,APPL RES LAB,YANGMEI 326,TAIWAN

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 01期

关键词：

field effect transistors; semiconductor devices;

D O I：

10.1049/el:19970030

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new i-In0.49Ga0.51P n-In1Ga1-xAs/i-GaAs step-compositioned doped-channel field-effect transistor (SCDCFET) has been fabricated and studied. Owing to the presence of a V-shaped energy band formed by the step-compositioned doped-channel structure, a large current density, a large gate voltage swing with high average transconductance and a high breakdown voltage are obtained. For a 1 x 80 mu m(2) gate dimension, a maximum drain saturation current of 830mA/mm, a maximum transconductance of 188mS mm, a high gate breakdown voltage of 34V, and a large gate voltage swing of 3.3V with transconductance > 150mS/mm are achieved. These performances show that the studied device has a good potentiality for high-speed, high-power, and large input signal circuit applications.

引用

页码：98 / 99

页数：2