Ultralow-threshold Raman lasing with CaF2 resonators

被引:70
作者
Grudinin, Ivan S. [1 ]
Maleki, Lute [1 ]
机构
[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA
关键词
D O I
10.1364/OL.32.000166
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We demonstrate efficient Raman lasing with CaF2 Whispering-gallery-mode resonators. Continuous-wave emission threshold is shown to be possible below 1 mu W with a 5 mm cavity, which is to our knowledge orders of magnitude lower than in any other Raman source. Low-threshold lasing is made possible by the ultrahigh optical quality factor of the cavity, of the order of Q = 5 x 10(10). Stokes components of up to the fifth order were observed at a pump power of 160 mu W, and up to the eighth order at 1 mW. A lasing threshold of 15 mu W was also observed in a 100 mu m CaF2 microcavity. Potential applications are discussed. (c) 2006 Optical Society of America.
引用
收藏
页码:166 / 168
页数:3
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