Study of the effects of a stepped doping profile in short-channel MOSFET's

被引：20

作者：

LopezVillanueva, JA

Gamiz, F

Roldan, JB

Ghailan, Y

Carceller, JE

Cartujo, P

机构：

[1] Departamento de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1997年 / 44卷 / 09期

关键词：

D O I：

10.1109/16.622597

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The performance of a stepped doping profile for improving the short-channel behavior of a submicrometer MOSFET has been analyzed in detail by using a quasi-two-dimensional (quasi-2-D) MOSFET simulator including inversion-layer quantization coupled with a one-electron Monte Carlo simulation. Several second-order effects, such as mobility degradation both by bulk-impurity and interface traps, carrier-velocity saturation, and channel-length modulation, have been included in the simulator. Very good agreement between experimental and simulated results are obtained for short-channel transistors, It has been shown that including a low-doped zone of convenient thickness next to the interface over a high-doping substrate improves both the electron mobility and the threshold voltage of the device, while avoiding short-channel effects, The use of simulation has allowed us to study certain kinds of devices without needing to make them.

引用

页码：1425 / 1431

页数：7

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