Effects of capping layer on the spin accumulation and spin torque in magnetic multilayers

被引：7
作者：
Chung, N. L. [1 ,2 ]
Jalil, M. B. A. [2 ,3 ]
Tan, S. G. [1 ,3 ]
机构：
[1] ASTAR, Data Storage Inst, Singapore 117608, Singapore
[2] Natl Univ Singapore, Elect & Comp Engn Dept, Informat Storage Mat Lab, Singapore 117576, Singapore
[3] Natl Univ Singapore, Elect & Comp Engn Dept, Computat Nanoelect & Nanodevice Lab, Singapore 117576, Singapore
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2009年 / 42卷 / 19期
关键词：
MAGNETORESISTANCE; DEPENDENCE; REVERSAL;
D O I：
10.1088/0022-3727/42/19/195502
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We study the effects of the physical properties of the capping layer (spin diffusion length (SDL), resistivity and interface resistance) on the spin transfer torque (STT) and spin accumulation in the free ferromagnetic (FM) layer of a magnetic multilayer system. The STT and spin accumulation are calculated based on a non-collinear spin drift-diffusion (SDD) model under the assumption of quasi-interfacial absorption of transverse spin accumulation in the FM layers. It is found that the out-of-plane component of the STT in the free FM layer is significantly enhanced by having a thick, highly resistive capping layer, with a long SDL. The in-plane torque component is, however, insensitive to variations in the capping layer properties. The implications of these trends to applications, such as current-induced magnetization switching and spin torque oscillations, are discussed.
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页数：8
相关论文
共 35 条
[1]  
ASHCROFT NW, 1976, SOLID STATE PHYS, P604
[2]   From giant magnetoresistance to current-induced switching by spin transfer [J].
Barnas, J ;
Fert, A ;
Gmitra, M ;
Weymann, I ;
Dugaev, VK .
PHYSICAL REVIEW B, 2005, 72 (02)
[3]  
BAZALIY YB, 2000, PHYS REV B, V69, P94421
[4]   Spin-transport in multi-terminal normal metal-ferromagnet systems with non-collinear magnetizations [J].
Brataas, A ;
Nazarov, YV ;
Bauer, GEW .
EUROPEAN PHYSICAL JOURNAL B, 2001, 22 (01) :99-110
[5]   Spin-mixing conductances of thin magnetic films from first principles [J].
Carva, K. ;
Turek, I. .
PHYSICAL REVIEW B, 2007, 76 (10)
[6]   Bias-driven high-power microwave emission from MgO-based tunnel magnetoresistance devices [J].
Deac, Alina M. ;
Fukushima, Akio ;
Kubota, Hitoshi ;
Maehara, Hiroki ;
Suzuki, Yoshishige ;
Yuasa, Shinji ;
Nagamine, Yoshinori ;
Tsunekawa, Koji ;
Djayaprawira, David D. ;
Watanabe, Naoki .
NATURE PHYSICS, 2008, 4 (10) :803-809
[7]   Magnetization switching by spin torque using subnanosecond current pulses assisted by hard axis magnetic fields [J].
Devolder, T ;
Crozat, P ;
Kim, JV ;
Chappert, C ;
Ito, K ;
Katine, JA ;
Carey, MJ .
APPLIED PHYSICS LETTERS, 2006, 88 (15)
[8]   Magnetization reversal by injection and transfer of spin:: experiments and theory [J].
Fert, A ;
Cros, V ;
George, JM ;
Grollier, J ;
Jaffrès, H ;
Hamzic, A ;
Vaurès, A ;
Faini, G ;
Ben Youssef, J ;
Le Gall, H .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2004, 272 :1706-1711
[9]   Combined ballistic and diffusive model of spin-polarized current-induced magnetization switching in pseudo-spin-valve structure [J].
Guo, J ;
Jalil, MBA .
PHYSICAL REVIEW B, 2005, 71 (22)
[10]   Spin-torque oscillator using a perpendicular polarizer and a planar free layer [J].
Houssameddine, D. ;
Ebels, U. ;
Delaet, B. ;
Rodmacq, B. ;
Firastrau, I. ;
Ponthenier, F. ;
Brunet, M. ;
Thirion, C. ;
Michel, J.-P. ;
Prejbeanu-Buda, L. ;
Cyrille, M.-C. ;
Redon, O. ;
Dieny, B. .
NATURE MATERIALS, 2007, 6 (06) :447-453
1234