Inverted Quantum-Dot Light-Emitting Diodes Fabricated by All-Solution Processing

被引:86
|
作者
Zhang, Heng [1 ]
Li, Hanrun [1 ]
Sun, Xiaowei [1 ]
Chen, Shuming [1 ]
机构
[1] Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China
基金
中国国家自然科学基金;
关键词
quantum dots; light-emitting diodes; inverted QD-LEDs; all-solution-processed; orthogonal solvents; intermixing; EFFICIENT; BRIGHT; DEVICES; PERFORMANCE;
D O I
10.1021/acsami.5b12737
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
All-solution processed, multilayer, and inverted quantum-dot light-emitting diodes (QD-LEDs) are developed in this work. To protect the QDs from dissolving by the solvents of upper layers, the solvents of poly(9-vinlycarbazole) (PVK) hole transporting layer are first investigated. The QD layer has been less affected by o-dichlorobenzene solvent than other typical solvents like, chloroform and chlorobenzene. Second, to deposit a hydrophilic poly(ethylenedioxythiophene)/polystyrenesulfonate (PEDOT:PSS) hole injection layer on top of hydrophobic PVK, the surface energy of the PEDOT:PSS is reduced by using isopropanol as the additive. With optimized conditions, the demonstrated QD-LEDs exhibit a maximum luminance of 16290 cd/m(2) and a peak current efficiency of 4.1 cd/A, which is the highest among the reported values. These results may offer a practicable platform for further research, leading to the achievement of all-solution processed, multilayer, and efficient inverted QD-LEDs.
引用
收藏
页码:5493 / 5498
页数:6
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