Microstructure and optical properties of GaN films grown on porous SiC substrate by MBE

被引：0

作者：

Yun, F ^{[1
]}

Reshchikov, MA ^{[1
]}

He, L ^{[1
]}

King, T ^{[1
]}

Huang, D ^{[1
]}

Morkoç, H ^{[1
]}

Inoki, CK ^{[1
]}

Kuan, TS ^{[1
]}

机构：

[1] Virginia Commonwealth Univ, Dept Elect Engn, Richmond, VA 23284 USA

来源：

DEFECT AND IMPURITY ENGINEERED SEMICONDUCTORS AND DEVICES III | 2002年 / 719卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaN thin films were grown on porous SiC substrates using reactive molecular beam epitaxy with ammonia as the nitrogen source. Microstructure analysis and optical characterization were performed to assess the quality of the effect of pores on the growth and the quality of the GaN films. Results indicate that the GaN films on porous SiC are slightly less defective and more strain-relaxed (some completely relaxed) when grown on porous SiC substrate, as compared to growth on standard 6H-SiC substrates. Rocking curve FWHMs of 3.3 arcmin for (0002) diffraction and 13.7 arcmin for (10 (1) over bar2) diffraction were obtained for sub-micron thick GaN films. Excitonic transition with FWHM as narrow as 9.5 meV was observed at 15K on the GaN layer grown on porous SiC without a skin layer.

引用

页码：17 / 22

页数：6

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