Comparison of different surface orientation in narrow fin MuGFETs

被引：2

作者：

Lee, Chi-Woo ^{[1
]}

Afzalian, Aryan ^{[1
]}

Ferain, Isabelle ^{[1
]}

Yan, Ran ^{[1
]}

Dehdashti, Nima ^{[1
]}

Byun, Ki-Yeol ^{[1
]}

Colinge, Cynthia ^{[1
]}

Xiong, Weize ^{[2
]}

Colinge, Jean-Pierre ^{[1
]}

机构：

[1] Tyndall Natl Inst, Cork, Ireland

[2] Texas Instruments Inc, Dallas, TX USA

来源：

MICROELECTRONIC ENGINEERING | 2009年 / 86卷 / 12期

基金：

爱尔兰科学基金会;

关键词：

Surface orientation; MuGFETs; Mobility; Breakdown voltage; ACCUMULATION-MODE; THRESHOLD VOLTAGE; PERFORMANCE; CMOS;

D O I：

10.1016/j.mee.2009.04.025

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Device performance characteristics are investigated for different surface orientation and doping concentration on accumulation-mode p-type and inversion-mode n-type MuGFETs. Short-channel effects and drain breakdown voltage are better is carrier transport is in the (1 0 0) direction than in the (1 1 0) direction. This is due to the larger Si/SiO2 interface roughness, the higher density of interface state at (1 1 0) surfaces, and to the difference of effective mass. The mobility in PMOS devices, however, is much higher in the (1 1 0) direction than that in the (1 0 0) direction. For better performance of device, our results show that optimized fin orientation can improve device stability and performance. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：2381 / 2384

页数：4

共 12 条

[1] Consequences of space dependence of effective mass in quantum wires [J].