Experiments of a diode-pumped Nd:GdVO4/LT-GaAs Q-switched and mode-locked laser

被引：65
作者：
Yang, J.
Fu, Q.
Liu, J. [1 ]
Wang, Y.
机构：
[1] Shandong Normal Univ, Coll Phys & Elect, Jinan 250014, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
来源：
LASER PHYSICS LETTERS | 2007年 / 4卷 / 01期
关键词：
LT-GaAs; Nd : GdVO4; diode-pump laser; mode-locking; Q-switching;
D O I：
10.1002/lapl.200610062
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A diode-pumped passively Q-switched mode-locked (QML) Nd:GdVO4 laser with a low temperature GaAs (LT-GaAs) saturable absorber is presented. The maximal Q-switched mode-locked average output power was 798 mW with the Q-switched envelop having a repetition rate of 125 kHz. The mode-locked pulse trains inside the Q-switched pulse envelope had a repetition rate of similar to 750 MHz. The laser properties of the operational parameters on the pump power were also investigated experimentally.
引用
收藏
页码：20 / 22
页数：3
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