共 50 条
- [1] InGaAsSb(Gd)/InAsSbP double heterostructure lasers (λ=3.0–3.3 µm) for diode laser spectroscopy Semiconductors, 2000, 34 : 848 - 852
- [4] High power InGaAsSb(Gd)/InAsSbP double heterostructure lasers (λ=3.3 µm) Semiconductors, 2001, 35 : 1208 - 1212
- [5] High power and single mode DH InGaAsSb(Gd)/InAsSbP (λ≈3.3 μm) diode lasers LIGHT-EMITTING DIODES: RESEARCH MANUFACTURING, AND APPLICATIONS V, 2001, 4278 : 13 - 18
- [6] Spectral characteristics of lasers based on InGaAsSb/InAsSbP double heterostructures (λ=3.0–3.6 µm) Semiconductors, 2000, 34 : 488 - 492
- [8] Gain and internal losses in InGaAsSb/InAsSbP double-heterostructure lasers Semiconductors, 1999, 33 : 700 - 703
- [10] Emissive characteristics of mesa-stripe lasers (λ=3.0–3.6 μm) made from InGaAsSb/InAsSbP double heterostructures Technical Physics Letters, 1998, 24 : 472 - 474