Tight-binding model for the electronic properties of buckled triangular borophene

被引：2

作者：

Horri, Ashkan ^{[1
]}

Faez, Rahim ^{[1
]}

机构：

[1] Islamic Azad Univ Arak, Dept Elect Engn, Arak Branch, Arak, Iran

来源：

MICRO & NANO LETTERS | 2019年 / 14卷 / 09期

关键词：

tight-binding calculations; boron; band structure; ab initio calculations; buckled triangular borophene; electronic properties; TB model; TB Hamiltonian; tight-binding model; boron atom; first-principle energy band; Slater-Koster approach; nearest-neighbour hoppings; high-symmetry k-points; B;

D O I：

10.1049/mnl.2019.0023

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this work, the authors present a tight-binding (TB) model for describing the electronic properties of buckled triangular Borophene. This TB model is constructed using three orbitals for each boron atom. The Slater-Koster approach is applied to calculate TB Hamiltonian. Parameters of the TB model are fitted from the first-principle energy band results. When only nearest-neighbour hoppings are included, this TB model is sufficient to capture the bands around high-symmetry k-points.

引用

页码：992 / 994

页数：3

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