Room-temperature CW operation of a nitride-based vertical-cavity surface-emitting laser using thick GaInN quantum wells

被引：44

作者：

Furuta, Takashi ^{[1
]}

Matsui, Kenjo ^{[1
]}

Horikawa, Kosuke ^{[1
]}

Ikeyama, Kazuki ^{[1
]}

Kozuka, Yugo ^{[1
]}

Yoshida, Shotaro ^{[1
]}

Akagi, Takanobu ^{[1
]}

Takeuchi, Tetsuya ^{[1
]}

Kamiyama, Satoshi ^{[1
]}

Iwaya, Motoaki ^{[1
]}

Akasaki, Isamu ^{[1
,2
,3
]}

机构：

[1] Meijo Univ, Fac Sci & Technol, Nagoya, Aichi 4688502, Japan

[2] Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan

[3] Nagoya Univ, Akasaki Res Ctr, Nagoya, Aichi 4648603, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 05期

关键词：

DIODES;

D O I：

10.7567/JJAP.55.05FJ11

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrated a room-temperature (RT) continuous-wave (CW) operation of a GaN-based vertical-cavity surface-emitting laser (VCSEL) using a thick GaInN quantum well (QW) active region and an AlInN/GaN distributed Bragg reflector. We first investigated the following two characteristics of a 6nm GaInN 5 QWs active region in light-emitting diode (LED) structures. The light output power at a high current density (similar to 10 kA/cm(2)) from the 6 nm GaInN 5 QWs was the same or even higher than that from standard 3 nm 5 QWs. In addition, we found that hole injection into the farthest QW from a p-layer was sufficient. We then demonstrated a GaN-based VCSEL with the 6 nm 5 QWs, resulting in the optical confinement factor of 3.5%. The threshold current density under CW operation at RT was 7.5 kA/cm(2) with a narrow (0.4 nm) emission spectrum of 413.5nm peak wavelength. (C) 2016 The Japan Society of Applied Physics

引用

页数：4

共 25 条

[1] P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI)
AMANO, H
KITO, M
HIRAMATSU, K
AKASAKI, I
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12): : L2112 - L2114
[2] [Anonymous], MRS FALL M
[3] [Anonymous], 2012, IEEE J QUANTUM ELECT, DOI DOI 10.1109/JQE.2012.2203586
[4] [Anonymous], 21 INT SEM LAS C
[5] Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes
Charash, R.
Maaskant, P. P.
Lewis, L.
McAleese, C.
Kappers, M. J.
Humphreys, C. J.
Corbett, B.
[J]. APPLIED PHYSICS LETTERS, 2009, 95 (15)
[6] Coldren L. A., 1995, Diode Lasers and Photonic Integrated Circuits
[7] Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate
Cosendey, Gatien
Castiglia, Antonino
Rossbach, Georg
Carlin, Jean-Francois
Grandjean, Nicolas
[J]. APPLIED PHYSICS LETTERS, 2012, 101 (15)
[8] Demonstration of Nonpolar GaN-Based Vertical-Cavity Surface-Emitting Lasers
Holder, Casey
Speck, James S.
DenBaars, Steven P.
Nakamura, Shuji
Feezell, Daniel
[J]. APPLIED PHYSICS EXPRESS, 2012, 5 (09)
[9] Demonstration of Blue and Green GaN-Based Vertical-Cavity Surface-Emitting Lasers by Current Injection at Room Temperature
Kasahara, Daiji
Morita, Daisuke
Kosugi, Takao
Nakagawa, Kyosuke
Kawamata, Jun
Higuchi, Yu
Matsumura, Hiroaki
Mukai, Takashi
[J]. APPLIED PHYSICS EXPRESS, 2011, 4 (07)
[10] Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact
Leonard, J. T.
Young, E. C.
Yonkee, B. P.
Cohen, D. A.
Margalith, T.
DenBaars, S. P.
Speck, J. S.
Nakamura, S.
[J]. APPLIED PHYSICS LETTERS, 2015, 107 (09)

← 1 2 3 →