Effect of gain saturation on the nonlinear dynamics of a semiconductor laser

被引：0
作者：
Chattopadhyay, T
Bhattacharya, M
机构：
来源：
JOURNAL OF THE INSTITUTION OF ELECTRONICS AND TELECOMMUNICATION ENGINEERS | 1996年 / 42卷 / 06期
关键词：
semiconductor laser; relaxation oscillation; modulation bandwidth;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The decoupled rate equations of a single-mode semiconductor laser are nonlinear in nature. A nonlinear analysis of the system has been carried out in this paper considering gain saturation effect. Expressions for damping rate and frequency of relaxation oscillation, and direct modulation bandwidth of the semiconductor laser have been derived which are modified from those of a linearized system. The dependence of these quantities on the gain saturation parameter for the realistic system has been studied in detail.
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页码：383 / 387
页数：5
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