Effect of Process Variables on Glass Frit Wafer Bonding in MEMS Wafer Level Packaging

被引：0

作者：

Sridharan, S. ^{[1
]}

Henry, J. ^{[2
]}

Maloney, J. ^{[1
]}

Gardner, B. ^{[2
]}

Mason, K. ^{[2
]}

Dragoi, V. ^{[3
]}

Burggraf, J. ^{[3
]}

Pabo, E. ^{[4
]}

Cakmak, E. ^{[4
]}

机构：

[1] Ferro Corp, Elect Mat Syst, 7500 East Pleasant Valley Rd, Independence, OH 44136 USA

[2] 1395 Aspen Way, Vista, CA 92083 USA

[3] EV Grp, DIE Thallner, Folrian, Austria

[4] EV Grp Inc, Tempe, AZ 85284 USA

来源：

MICROELECTROMECHANCIAL SYSTEMS - MATERIALS AND DEVICES II | 2009年 / 1139卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Among different MEMS wafer level bonding processes, glass frit bonding provides reliable vacuum tight seals in volume production. The quality of the seal is a function of both seal glass material and the processing parameters used in glass frit bonding. Therefore, in this study Taguchi L18 screening Design of Experiment (DOE) was used to study the effect of materials and process variables on the quality of the glass seal in 6 '' silicon wafers bonded in an EVG5201S bonder. Six bonding process variables at three levels and two types of sealing glass pastes were considered. The seals were characterized by Scanning Acoustic Microscopy (SAM), cross sectional Scanning Electron Microscopy (SEM) and Energy Dispersive X-ray Analysis (EDAX). The results were quantified into four responses for DOE analysis. Key results are a) peak temperature has the strongest influence on seal properties, b) hot melt paste has significantly lower defects compared to liquid paste, and c) peak firing temperatures can be as low as 400 degrees C under certain conditions.

引用

页码：133 / +

页数：2

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