Effects of dopant contents on structural, morphological and optical properties of Er doped Ga2O3 films

被引：54

作者：

Chen, Zhengwei ^{[1
]}

Wang, Xu ^{[1
]}

Noda, Shinji ^{[1
]}

Saito, Katsuhiko ^{[1
]}

Tanaka, Tooru ^{[1
]}

Nishio, Mitsuhiro ^{[1
]}

Arita, Makoto ^{[2
]}

Guo, Qixin ^{[1
]}

机构：

[1] Saga Univ, Dept Elect & Elect Engn, Synchrotron Light Applicat Ctr, Saga 8408502, Japan

[2] Kyushu Univ, Fac Engn, Dept Mat Sci & Engn, 744 Motooka, Fukuoka 8190395, Japan

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2016年 / 90卷

关键词：

Gallium oxide; Epitaxial growth; PLD; Thin films; Morphological optical properties; EMISSION; ELECTROLUMINESCENCE;

D O I：

10.1016/j.spmi.2015.12.025

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have investigated structural, morphological and optical properties of erbium (Er) doped Ga2O3 films with different Er contents. All the films were deposited on sapphire substrates by pulsed laser deposition. Temperature insensitive pure green luminescence at 550 nm has been demonstrated from these films. No peak shift at 550 nm is found with temperatures ranging from 77 to 450 K. The intensity of the green emission decreases with the increase of temperature, and the normalized intensity of the Er doped Ga2O3 films has a smaller variation with temperature compared to Er doped GaN films. These results indicate that Ga2O3 is a good host material for Er and potentially for other rare earth elements. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：207 / 214

页数：8

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