A Three-Stage 18.5-24-GHz GaN-on-SiC 4 W 40% Efficient MMIC PA

被引：45

作者：

Duffy, Maxwell Robert ^{[1
]}

Lasser, Gregor ^{[1
]}

Nevett, Guillermo ^{[3
]}

Roberg, Michael ^{[2
]}

Popovic, Zoya ^{[1
]}

机构：

[1] Univ Colorado, Dept Elect Comp & Energy Engn, Boulder, CO 80309 USA

[2] Qorvo, Infrastruct & Def Prod, Richardson, TX 75082 USA

[3] Univ Colorado, Dept Civil Environm & Architectural Engn, Boulder, CO 80309 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2019年 / 54卷 / 09期

关键词：

Broadband; efficiency; GaN; monolithic microwave integrated circuit (MMIC); power amplifiers (PAs);

D O I：

10.1109/JSSC.2019.2924087

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the design and measured continuous-wave (CW) performance of a three-stage K-band monolithic microwave integrated circuit (MMIC) power amplifier (PA) implemented in a 150-nm GaN-on-SiC process. The transistor peripheries are staged at a ratio of 1:2:8, and the output stage consists of two reactively combined 8 x 100 mu m HEMTs with individual source vial. The measured peak output power is greater than 4 W with peak power added efficiency (PAE) of greater than 40%. The output power exceeds 3.2 W over the frequency range of 18-24 GHz with less than 1.5-dB variation. The three-stage architecture enables greater than 20 dB of saturated gain from 18.5 to 24 GHz. The bandwidth, output power, and efficiency performance are investigated as a function of output stage drain voltage. A statistical analysis for 230 die fabricated on five wafers is presented, and eight MMICs are mounted and characterized over power and frequency.

引用

页码：2402 / 2410

页数：9

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