Radiation tolerance of high-density FPGAs

被引：0
作者：
Alfke, P
Padovani, R
机构：
来源：
ELECTRONIC ENGINEERING | 2000年 / 72卷 / 880期
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
SRAM-based high-density FPGAs offer many advantages in satellite and other aerospace applications; which raises the question of the susceptibility of configuration latches to radiation-induced upsets. Radiation testing has established that specially processed Xilinx devices exhibit latch-up immunity and a very low probability of soft errors in their configuration-storage latches and user flip-flops. The devices, designs and results are described, including triple-redundant systems that can quickly detect and repair a soft error.
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页码：28 / +
页数：2
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