Fluorinated silica glass ablated with ArF excimer laser at low fluence

被引：3
|
作者：
Awazu, Koichi
机构：
[1] Univ Tokyo, Sch Engn, Dept Engn Synth, Bunkyo Ku, Tokyo 1138656, Japan
[2] Natl Inst Adv Ind Sci & Technol, CAN FOR, Tsukuba, Ibaraki 3058562, Japan
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 2007年 / 353卷 / 02期
关键词：
laser-matter interactions; silica;
D O I：
10.1016/j.jnoncrysol.2006.11.002
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Amorphous SiO2 (a-SiO2) was formed by liquid-phase deposition (LPD) at room temperature. As a result of one shot of ArF excimer laser irradiation, LPD-formed a-SiO2 shows a threshold fluence for ablation of below than 200 mJ/cm(2), which is much lower than the threshold fluence (similar to 1 J/cm(2)) of a-SiO2 formed by thermal oxidation of silicon. Raman scattering spectroscopy revealed that two sharp lines at 495 cm(-1) and 606 cm(-1), respectively, labeled D-1 and D-2, had disappeared, and the main band at 430 cm(-1) was sharpened in LPD-formed a-SiO2. It is presumed that the fluorine broke the silica network, relaxing the Si-O-Si bond angle and dramatically reducing the threshold energy for ablation of a-SiO2. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：215 / 217
页数：3
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