100-V Class Two-step-oxide Field-Plate Trench MOSFET to Achieve Optimum RESURF Effect and Ultralow On-resistance

被引：0

作者：

Kobayashi, Kenya ^{[1
]}

Kato, Hiroaki ^{[1
]}

Nishiguchi, Toshifumi ^{[1
]}

Shimomura, Saya ^{[1
]}

Ohno, Tetsuya ^{[1
]}

Nishiwaki, Tatsuya ^{[1
]}

Aida, Kikuo ^{[1
]}

Ichinoseki, Kentaro ^{[1
]}

Oasa, Kohei ^{[1
]}

Kawaguchi, Yusuke ^{[1
]}

机构：

[1] Toshiba Elect Devices & Storage Corp, Adv Discrete Dev Ctr, Nomi, Ishikawa, Japan

来源：

2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2019年

关键词：

field plate; RESURF; shielded gate; oxide slope; figure-of-merit; power loss;

D O I：

10.1109/ispsd.2019.8757615

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We propose a 100-V class two-step-oxide Field-Plate MOSFET (2-step FP-MOSFET), which is formed by two steps of thick-oxide to simplify the structure and fabrication process. By optimizing design parameters, we reveal the 2-step FP-MOSFET can achieve sufficient RESURF (Reduced Surface Field) effect and an ultralow specific on-resistance (R(ON)A). Measurement results showed breakdown voltage of 109.9 V and the R(ON)A of 27.7 mohm.mm(2) with good process controllability. Moreover, as figure-of-merit of the 2-step FP-MOSFET, R-ON.Q(g) and R-ON.Q(sw) were reduced by 27.1% and 4.7%, respectively, compared with conventional one. Power loss estimation is also discussed by simple calculation.

引用

页码：99 / 102

页数：4

共 3 条

[1] On-Resistance Limit Estimation of 100 V-class Field-Plate Trench Power MOSFETs Optimized Oxide Thickness
Ogawa, Taichi
Saito, Wataru
Nishizawa, Shin-Ichi
IEEE ELECTRON DEVICE LETTERS, 2020, 41 (07) : 1063 - 1065
[2] Drift Layer Design utilizing Intermediate Boron Ion-implantation for 100-V-class Two-step-oxide Field-Plate Trench MOSFET to Improve Switching Loss
Kobayashi, Kenya
Kato, Hiroaki
Aida, Kikuo
Goryu, Akihiro
Nishiwaki, Tatsuya
2021 33RD INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2021, : 191 - 194
[3] 100 V Class Multiple Stepped Oxide Field Plate Trench MOSFET (MSO-FP-MOSFET) Aimed to Ultimate Structure Realization
Kobayashi, Kenya
Nishiguchi, Toshifumi
Katoh, Shunsuke
Kawano, Takahiro
Kawaguchi, Yusuke
2015 IEEE 27TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD), 2015, : 141 - 144

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