Highly transparent quantum-dot light-emitting diodes with sputtered indium-tin-oxide electrodes

被引：59

作者：

Wang, Weigao ^{[1
]}

Peng, Huiren ^{[1
]}

Chen, Shuming ^{[1
]}

机构：

[1] South Univ Sci & Technol China, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2016年 / 4卷 / 09期

基金：

中国国家自然科学基金;

关键词：

12;

D O I：

10.1039/c5tc04223b

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Transparent, all-solution processed quantum-dot light-emitting diodes (QD-LEDs) are developed in this work. Indium-tin-oxide (ITO) fabricated by sputtering is adopted as transparent electrodes for the QD-LEDs. To reduce the plasma damage caused by sputtering, ZnO nanocrystals with a thickness of 82 nm are employed as the buffer layer and the electron transport layer. As a result, damage-free QD-LEDs are demonstrated with a high averaged transparency of 70%. The transparent QD-LEDs exhibit an external quantum efficiency of 5% (current efficiency of 7 cd A(-1)), which is comparable to that of the devices with conventional Al electrodes.

引用

页码：1838 / 1841

页数：4

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