Rectifying characteristics of heterostructures with diamond and diamond-like carbon films

被引：0
|
作者：
Shen, MR [1 ]
Wang, H [1 ]
Ning, ZY [1 ]
Ye, C [1 ]
Gan, ZQ [1 ]
Ren, ZX [1 ]
机构：
[1] ACAD SINICA, INST PLASMA PHYS, HEFEI 230031, PEOPLES R CHINA
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1997年 / 26卷 / 08期
关键词：
diamond-films; rectifying-heterostructures;
D O I：
10.1007/s11664-997-0273-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Semiconducting diamond-like carbon (DLC) films were deposited on n-type Si substrates by the electrodeposition method, and diamond films were formed on the carbon film and/or a Si substrate directly by the hot-filament chemical vapor deposition method. Rectifying heterostructures of Al/DLC/Si/Al, AL/diamond/Si/Al, and Al/diamond/DLC/Si/Al were fabricated. The Al/DLC/Si/Al structure has a bulk resistivity of 6 x 10(5) Ohm-cm and a rectification ratio close to two orders of magnitude. Experimental results demonstrate that the Al/diamond/DLC/Si/Al bilayer structure can significantly reduce the leakage current to about 10(-10) A and increase the rectification ratio by 3-5 orders of magnitude at 5 V, compared with that of the other two structures. Possible reasons are given for the changes of the rectifying characteristic.
引用
收藏
页码：910 / 914
页数：5
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