GaAs(001) (2 x 4) to c(4 x 4) transformation observed in situ by STM during As flux irradiation

被引：5

作者：

Bastiman, F. ^{[1
]}

Cullis, A. G. ^{[1
]}

Hopkinson, M. ^{[1
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

SURFACE SCIENCE | 2009年 / 603卷 / 16期

关键词：

Scanning tunnelling microscopy; Molecular beam epitaxy; (2 x 4); c(4 x 4); In vivo; Concurrent; MOLECULAR-BEAM EPITAXY; SCANNING-TUNNELING-MICROSCOPY; MBE GROWTH; SURFACE; RECONSTRUCTION; GA; NUCLEATION; DIFFUSION;

D O I：

10.1016/j.susc.2009.05.015

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Atomic resolution scanning tunnelling microscopy (STM) has been used to study in situ the As-terminated ;reconstructions formed on GaAs(0 0 1) surfaces in the presence of an AS(4) flux. The relationship between the As-rich (2 x 4) and c(4 x 4) surfaces is observed throughout the gradual evolution of the reconstruction transformation. The results suggest that during the initial stage of the transformation, Ga-rich As-terminated variations of the c(4 x 4) form in order to accommodate excess mobile Ga produced by pit formation. These transient structures later planarize, as excess Ga is incorporated at step/island edges. Successive imaging of the same sample area during As-4 irradiation allows point-by-point adatom binding to be analysed in a way inaccessible to MBE-STM systems relying on sample quenching and transfer. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：2398 / 2402

页数：5

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