A 300-V LDMOS Analog-Multiplexed Driver for MEMS Devices

被引：29

作者：

Dai, Shanshan ^{[1
,2
]}

Knepper, Ronald W. ^{[1
]}

Horenstein, Mark N. ^{[1
]}

机构：

[1] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA

[2] Brown Univ, Sch Engn, Providence, RI 02912 USA

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS | 2015年 / 62卷 / 12期

关键词：

Analog switch; class-B amplifier; frequency compensation; high voltage integrated circuits; HV amplifier; LDMOS; level shifter; MEMS; off-isolation; 3-STAGE AMPLIFIER; CAPACITIVE LOAD;

D O I：

10.1109/TCSI.2015.2495723

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The paper presents a high-voltage integrated-circuit driver capable of producing analog voltages up to 300 V, using Dalsa's 0.8-mu m HV CMOS/DMOS process, suitable for MEMS and medical systems. The IC driver includes a HV operational amplifier (op-amp) with a class-B output stage, and HV analog switches with improved off-isolation performance. In contrast to previous frequency compensation schemes, where only one dominant pole occurs below the unity-gain bandwidth, the HV op-amp employs a novel frequency compensation topology with three poles and two zeros located within the unity-gain bandwidth, and is capable of driving large capacitive loads from 100 pF to 10 nF. Theoretical analysis of off-isolation of the HV analog switches is also reported and confirms the improvement in off-isolation performance.

引用

页码：2806 / 2816

页数：11

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