Large Rashba spin splitting of surface resonance bands on semiconductor surface

被引：59

作者：

Hatta, Shinichiro ^{[1
,2
]}

Aruga, Tetsuya ^{[1
,2
]}

Ohtsubo, Yoshiyuki ^{[1
]}

Okuyama, Hiroshi ^{[1
]}

机构：

[1] Kyoto Univ, Grad Sch Sci, Dept Chem, Kyoto 6068502, Japan

[2] JST CREST, Kawaguchi, Saitama 3320012, Japan

来源：

PHYSICAL REVIEW B | 2009年 / 80卷 / 11期

关键词：

AU(111); STATES;

D O I：

10.1103/PhysRevB.80.113309

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have found a large spin splitting due to the Rashba spin-orbit interaction on the Bi/Ge(111)-(root 3 x root 3)R30 degrees surface by using angle-resolved photoelectron spectroscopy and first-principles electronic structure calculation. A surface resonance band derived from Bi exhibits the Rashba spin splitting with a large Rashba parameter (alpha(R)) of 1.8 eV angstrom. The spin-split states have a considerable 6s-6p(z) hybridized character, which leads to a strong perpendicular asymmetry of the charge density in close proximity of Bi nuclei. The result suggests that the magnitude of the Rashba splitting on Bi-adsorbed surfaces should depend crucially on the local-bonding geometry of Bi.

引用

页数：4

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