GaN/ZnO nanorod light emitting diodes with different emission spectra

被引：69

作者：

Ng, A. M. C. ^{[1
]}

Xi, Y. Y. ^{[1
]}

Hsu, Y. F. ^{[1
]}

Djurisic, A. B. ^{[1
]}

Chan, W. K. ^{[2
]}

Gwo, S. ^{[3
]}

Tam, H. L. ^{[4
]}

Cheah, K. W. ^{[4
]}

Fong, P. W. K. ^{[5
]}

Lui, H. F. ^{[5
]}

Surya, C. ^{[5
]}

机构：

[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China

[2] Univ Hong Kong, Dept Chem, Hong Kong, Hong Kong, Peoples R China

[3] Natl Tsing Hua Univ, Dept Phys, Hsinchu 300, Taiwan

[4] Hong Kong Baptist Univ, Dept Phys, Kowloon Tong, Hong Kong, Peoples R China

[5] Hong Kong Polytech Univ, Elect & Informat Engn Dept, Kowloon, Hong Kong, Peoples R China

来源：

NANOTECHNOLOGY | 2009年 / 20卷 / 44期

关键词：

ZNO NANOWIRE ARRAYS; VISIBLE LUMINESCENCE; HYDROTHERMAL METHOD; GAN HETEROJUNCTION; ELECTROLUMINESCENCE; OXYGEN;

D O I：

10.1088/0957-4484/20/44/445201

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Light emitting diodes (LEDs) consisting of p-GaN epitaxial films and n-ZnO nanorods have been fabricated and characterized. The rectifying behavior and emission spectra were strongly dependent on the electronic properties of both GaN film and ZnO nanorods. Light emission under both forward and reverse bias was obtained in all cases, and emission spectra could be changed by annealing the ZnO nanorods. The emission spectra could be further tuned by using a GaN LED epiwafer as a substrate. Both forward and backward diode behavior has been observed and the emission spectra were significantly affected by both the properties of the GaN substrate and the annealing conditions for the ZnO nanorods.

引用

页数：8

共 35 条

[1] Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes [J].

Alivov, YI ;

Van Nostrand, JE ;

Look, DC ;

Chukichev, MV ;

Ataev, BM .

APPLIED PHYSICS LETTERS, 2003, 83 (14) :2943-2945

[2] Near ultraviolet light emitting diode composed of n-GaN/ZnO coaxial nanorod heterostructures on a p-GaN layer [J].

An, Sung Jin ;

Yi, Gyu-Chul .

APPLIED PHYSICS LETTERS, 2007, 91 (12)

[3] A hybrid green light-emitting diode comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN [J].

Bayram, C. ;

Teherani, F. Hosseini ;

Rogers, D. J. ;

Razeghi, M. .

APPLIED PHYSICS LETTERS, 2008, 93 (08)

[4] Observation of 394 nm electroluminescence from low-temperature sputtered n-ZnO/SiO2 thin films on top of the p-GaN heterostructure [J].

Chen, Cheng Pin ;

Ke, Min Yung ;

Liu, Chien Cheng ;

Chang, Yuan Jen ;

Yang, Fu Hsiang ;

Huang, Jian Jang .

APPLIED PHYSICS LETTERS, 2007, 91 (09)

[5] ZnO-on-GaN heterojunction light-emitting diode grown by vapor cooling condensation technique [J].

Chuang, Ricky W. ;

Wu, Rong-Xun ;

Lai, Li-Wen ;

Lee, Ching-Ting .

APPLIED PHYSICS LETTERS, 2007, 91 (23)

[6] Defect emissions in ZnO nanostructures [J].

Djurisic, A. B. ;

Leung, Y. H. ;

Tam, K. H. ;

Hsu, Y. F. ;

Ding, L. ;

Ge, W. K. ;

Zhong, Y. C. ;

Wong, K. S. ;

Chan, W. K. ;

Tam, H. L. ;

Cheah, K. W. ;

Kwok, W. M. ;

Phillips, D. L. .

NANOTECHNOLOGY, 2007, 18 (09)

[7]

DRAPAK IT, 1968, SOV PHYS SEMICOND+, V2, P513

[8] Synthesis and characterization of ZnO nanorods and nanoflowers grown on GaN-based LED epiwafer using a solution deposition method [J].

Gao, Haiyong ;

Yan, Fawang ;

Li, Jinmin ;

Zeng, Yiping ;

Wang, Junxi .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (12) :3654-3659

[9] General route to vertical ZnO nanowire arrays using textured ZnO seeds [J].

Greene, LE ;

Law, M ;

Tan, DH ;

Montano, M ;

Goldberger, J ;

Somorjai, G ;

Yang, PD .

NANO LETTERS, 2005, 5 (07) :1231-1236

[10] Low-temperature wafer-scale production of ZnO nanowire arrays [J].

Greene, LE ;

Law, M ;

Goldberger, J ;

Kim, F ;

Johnson, JC ;

Zhang, YF ;

Saykally, RJ ;

Yang, PD .

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2003, 42 (26) :3031-3034

← 1 2 3 4 →