Analytical threshold voltage modeling of ion-implanted strained-Si double-material double-gate (DMDG) MOSFETs

被引：14

作者：

Goel, E. ^{[1
]}

Singh, B. ^{[1
]}

Kumar, S. ^{[1
]}

Singh, K. ^{[1
]}

Jit, S. ^{[1
]}

机构：

[1] Indian Inst Technol BHU, Dept Elect Engn, Varanasi 221005, Uttar Pradesh, India

来源：

INDIAN JOURNAL OF PHYSICS | 2017年 / 91卷 / 04期

关键词：

Threshold voltage; Ion-implanted; Strained silicon; Double-material double-gate (DMDG); INSULATOR; CHANNEL;

D O I：

10.1007/s12648-016-0918-6

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Two dimensional threshold voltage model of ion-implanted strained-Si double-material double-gate MOSFETs has been done based on the solution of two dimensional Poisson's equation in the channel region using the parabolic approximation method. Novelty of the proposed device structure lies in the amalgamation of the advantages of both the strained-Si channel and double-material double-gate structure with a vertical Gaussian-like doping profile. The effects of different device parameters (such as device channel length, gate length ratios, germanium mole fraction) and doping parameters (such as projected range, straggle parameter) on threshold voltage of the proposed structure have been investigated. It is observed that the subthreshold performance of the device can be improved by simply controlling the doping parameters while maintaining other device parameters constant. The modeling results show a good agreement with the numerical simulation data obtained by using ATLAS (TM), a 2D device simulator from SILVACO.

引用

页码：383 / 390

页数：8

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