Tunneling Conductance of Ba1-xKxFe2As2-GaAs Junction

被引：2

作者：

Tanaka, Masashi ^{[1
]}

Shimada, Daisuke ^{[1
]}

机构：

[1] Shizuoka Univ, Dept Phys, Suruga Ku, Shizuoka 4228529, Japan

来源：

JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM | 2009年 / 22卷 / 08期

关键词：

Point contact; Tunneling; Ba1-xKxFe2As2-GaAs junction; Electron-phonon interaction; IRON-PNICTIDES; SUPERCONDUCTIVITY; SPECTROSCOPY; OXIDES; METAL;

D O I：

10.1007/s10948-009-0535-0

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We carried out point contact tunneling measurements by simply contacting degenerate GaAs semiconductor to polycrystalline Ba1-xKxFe2As2 with T-c = 31.1 +/- 1.0 K. The gap related structure was easily obtained. The gap value 2 Delta determined from peak-to-peak voltage was 18.0 meV, and 2 Delta/k(B)T(c) was 6.8. Small structures were observed at V similar to +/- 23 mV in the conductance curve separately from the gap edge structure. These values are included in phonon energy region and correspond to a peak of phonon density of states. Thus, the structures are attributed to phonon structure. We calculated d(2)I/dV(2) and T-c, Delta in using Eliashberg equations by assuming alpha F-2(omega) from neutron phonon spectrum. The first phonon structure in calculated d(2)I/dV(2) is comparable to experimental one.

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页码：719 / 722

页数：4

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