Two-dimensional Analysis of Carrier Distribution in Phosphorus-Implanted Emitter and Phosphorus-Diffused Emitter using Super-Higher-Order Scanning Nonlinear Dielectric Microscopy

被引：0

作者：

Hirose, Kotaro ^{[1
]}

Tanahashi, Katsuto ^{[2
]}

Takato, Hidetaka ^{[2
]}

Chinonel, Norimichi ^{[1
]}

Cho, Yasuo ^{[1
]}

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Sendai, Miyagi 9808577, Japan

[2] Natl Inst Adv Ind Sci & Technol, Fukushima Renewable Energy Inst, Koriyama, Fukushima 9630298, Japan

来源：

2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2016年

关键词：

scanning nonlinear dielectric microscopy; scanning probe microscopy; silicon; semiconductor; doping; capacitance; surface texture; ion implantation; diffusion process; SILICON;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Two-dimensional carrier distributions in phosphorus (P)-implanted emitter and P-diffused emitter were analyzed using super-higher-order scanning nonlinear dielectric microscopy (SHO-SNDM). The carrier distribution was clearly visualized and quantified using calibration sample. P-type, n-type and depletion layer was discriminated from local capacitance-voltage characterization obtained from SHO-SNDM measurement. The n-type region and depletion layer distribution depended on the surface texture. The position of p-n junction was estimated near the p-type region in depletion layer. The n-type region and depletion layer distribution was thicker in P-implanted emitter than P-diffused emitter.

引用

页码：3671 / 3674

页数：4

共 8 条

[1] Quantitative Analysis of Active Dopant Distribution and Estimation of Effective Diffusivity in Phosphorus-Implanted Emitter of Si Solar Cell Using Scanning Nonlinear Dielectric Microscopy
Hirose, Kotaro
Tanahashi, Katsuto
Takato, Hidetaka
Cho, Yasuo
2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2017, : 3323 - 3326
[2] Two-dimensional local deep level transient spectroscopy imaging using super-higher-order scanning nonlinear dielectric microscopy
Chinone, N.
Cho, Y.
Kosugi, R.
Tanaka, Y.
Harada, S.
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ISTFA 2016: CONFERENCE PROCEEDINGS FROM THE 42ND INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS, 2016, : 441 - 445
[3] Local deep level transient spectroscopy using super-higher-order scanning nonlinear dielectric microscopy
Chinone, N.
Kosugi, R.
Tanaka, Y.
Harada, S.
Okumura, H.
Cho, Y.
MICROELECTRONICS RELIABILITY, 2016, 64 : 566 - 569
[4] Carrier redistribution analysis of gate-biased SiC power-MOSFET using super-higher-order scanning nonlinear dielectric microscopy
Chinone, Norimichi
Cho, Yasuo
ISTFA 2015: CONFERENCE PROCEEDINGS FROM THE 41ST INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS, 2015, : 329 - 332
[5] Quantitative measurement of active dopant density distribution in phosphorus-implanted monocrystalline silicon solar cell using scanning nonlinear dielectric microscopy
Hirose, K.
Tanahashi, K.
Takato, H.
Cho, Y.
APPLIED PHYSICS LETTERS, 2017, 111 (03)
[6] Local deep level transient spectroscopy using super-higher-order scanning nonlinear dielectric microscopy and its application to imaging two-dimensional distribution of SiO2/SiC interface traps
Chinone, N.
Cho, Y.
JOURNAL OF APPLIED PHYSICS, 2017, 122 (10)
[7] Proposal of local deep level transient spectroscopy using super-higher-order scanning nonlinear dielectric microscopy and 2-dimensional imaging of trap distribution in SiO2/SiC interface
Chinone, Norimichi
Kosugi, Ryoji
Tanaka, Yasunori
Harada, Shinsuke
Okumura, Hajime
Cho, Yasuo
PROCEEDINGS OF THE 2016 IEEE 23RD INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA), 2016, : 360 - 364
[8] Cross-sectional dopant profiling and depletion layer visualization of SiC power double diffused metal-oxide-semiconductor field effect transistor using super-higher-order nonlinear dielectric microscopy
Chinone, N.
Nakamura, T.
Cho, Y.
JOURNAL OF APPLIED PHYSICS, 2014, 116 (08)

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