Images of dopant profiles in low-energy scanning transmission electron microscopy

被引：15
作者：
Merli, PG
Corticelli, F
Morandi, V
机构：
[1] CNR IMM, Sez Biol, I-40129 Bologna, Italy
[2] Univ Bologna, Dept Phys, I-40126 Bologna, Italy
[3] Univ Bologna, INFM, I-40126 Bologna, Italy
来源：
APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 24期
关键词：
D O I：
10.1063/1.1528734
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A scanning electron microscope is used in transmission mode. The image is formed with secondary electrons, collected by the standard detector, resulting from the conversion of transmitted electrons on a circular disk, covered with MgO smoke, located below the thinned specimen, and centered on the optical axis. Operating in this mode, bright-field images of As dopant profiles in Si, having a peak concentrations of 5 and 2.5 at. % and a spatial extension of about 40 nm, have been observed in cross sectioned specimens. The description of the dopant profiles has a resolution of 6 nm as defined by the spot size of the microscope, equipped with a LaB6 tip, and operating at 30 keV. (C) 2002 American Institute of Physics.
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页码：4535 / 4537
页数：3
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