Effects of island coalescence on the compensation mechanisms in chlorine doped polycrystalline CdTe

被引:19
作者
Consonni, V. [1 ]
Feuillet, G.
Bleuse, J.
Donatini, F.
机构
[1] CEA, LETI, MINATEC, F-38054 Grenoble, France
[2] CEA, CNRS, UJF, Nanophys & Semicond Grp,SP2M,Dept Rech Fondamenta, F-38054 Grenoble, France
[3] Univ Grenoble 1, CNRS, CEA,UJF,Nanophys & Semicond Grp,Lab Spectrochim P, UMR 5588, F-38402 St Martin Dheres, France
关键词
D O I
10.1063/1.2711412
中图分类号
O59 [应用物理学];
学科分类号
摘要
Combined structural, chemical, and spectroscopic analyses have been carried out on chlorine (Cl) doped polycrystalline CdTe before, upon, and after coalescence of the initial isolated islands in order to investigate the effects of the formation of grain boundaries on Cl incorporation and on the related compensation mechanisms. From 4 K cathodoluminescence measurements, coalescence is found to be associated with a change in the Cl related compensation mechanisms in particular with the appearance of shallow acceptor complexes noted beta. Simultaneously, the donor acceptor pair transitions involving A centers shift toward higher energies, indicating a decrease of the donor to acceptor separation. These observations are tentatively assigned to the segregation of Cl atoms in the vicinity of grain boundaries, upon coalescence, as directly shown by time-of-flight secondary ion mass spectroscopy imaging. Furthermore, long after coalescence, on thick polycrystalline CdTe, the density of beta acceptor complexes is even larger due to twinning deformation processes suggesting further segregation phenomena within grains. (c) 2007 American Institute of Physics.
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页数:6
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共 35 条
[1]   ENERGY LEVELS OF DIRECT EXCITONS IN SEMICONDUCTORS WITH DEGENERATE BANDS [J].
BALDERESCHI, A ;
LIPARI, NO .
PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (02) :439-+
[2]   BINDING-ENERGY OF AN ELECTRON TO A 3-DEFECT-COMPLEX IN CDTE [J].
BELL, RO .
SOLID STATE COMMUNICATIONS, 1975, 16 (07) :913-916
[3]   Native defects in CdTe [J].
Berding, MA .
PHYSICAL REVIEW B, 1999, 60 (12) :8943-8950
[4]   ELECTRONIC-PROPERTIES OF A CENTERS IN CDTE - A COMPARISON WITH EXPERIMENT [J].
BIERNACKI, S ;
SCHERZ, U ;
MEYER, BK .
PHYSICAL REVIEW B, 1993, 48 (16) :11726-11731
[5]   Comparison of electrical and luminescence data for the A center in CdTe [J].
Castaldini, A ;
Cavallini, A ;
Fraboni, B ;
Fernandez, P ;
Piqueras, J .
APPLIED PHYSICS LETTERS, 1996, 69 (23) :3510-3512
[6]   Symmetrized-basis LASTO calculations of defects in CdTe and ZnTe [J].
Chang, YC ;
James, RB ;
Davenport, JW .
PHYSICAL REVIEW B, 2006, 73 (03)
[7]   Origin of compressive residual stress in polycrystalline thin films [J].
Chason, E ;
Sheldon, BW ;
Freund, LB ;
Floro, JA ;
Hearne, SJ .
PHYSICAL REVIEW LETTERS, 2002, 88 (15) :4
[8]   Atomic configurations and energetics of arsenic impurities in a silicon grain boundary [J].
Chisholm, MF ;
Maiti, A ;
Pennycook, SJ ;
Pantelides, ST .
PHYSICAL REVIEW LETTERS, 1998, 81 (01) :132-135
[9]   Spectroscopic analysis of defects in chlorine doped polycrystalline CdTe [J].
Consonni, V ;
Feuillet, G ;
Renet, S .
JOURNAL OF APPLIED PHYSICS, 2006, 99 (05)
[10]   HYDROSTATIC AND UNIAXIAL PRESSURE COEFFICIENTS OF CDTE [J].
DUNSTAN, DJ ;
GIL, B ;
HOMEWOOD, KP .
PHYSICAL REVIEW B, 1988, 38 (11) :7862-7865