Nanophotonic crystals on unpolished sapphire substrates for deep-UV light-emitting diodes

被引：9

作者：

Tran, Tinh Binh ^{[1
,2
]}

AlQatari, Feras ^{[3
]}

Luc, Quang-Ho ^{[4
]}

机构：

[1] SUNY Polytech Inst, Coll Nanoscale Sci, Albany, NY 12203 USA

[2] SUNY Polytech Inst, Coll Engn, Albany, NY 12203 USA

[3] KAUST, Adv Semicond Lab, Thuwal 23955, Saudi Arabia

[4] Natl Chiao Tung Univ, Dept Mat Sci & Engn, 1001 Univ Rd, Hsinchu 300, Taiwan

来源：

SCIENTIFIC REPORTS | 2021年 / 11卷 / 01期

关键词：

D O I：

10.1038/s41598-021-84426-z

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

A new method has been established and employed to create a random nanophotonic crystal (NPhC) structure without photolithography on the unpolished side of a single-side-polished sapphire substrate. This nano structure has potential use in enhancing the light-extraction efficiency (LEE) of deep ultraviolet light-emitting diodes (DUV-LEDs), and has never been built for DUV-LED applications before. Two mask layers in the nano scale (Au and SiO2) were used to create the NPhC and observed using scanning electron microscopy to have an average height of 400 nm and various sizes from 10 to 200 nm. Finally, a conventional DUV-LED and a DUV-LED device with NPhC were simulated using 2D Lumerical Finite-Difference Time-Domain (FDTD) for comparison. The results show that the LEE of the DUV-LED device with this NPhC integrated was significantly directly enhanced by up to 46% and 90% for TE and TM modes, respectively, compared to the conventional DUV-LED device. Thus, this NPhC is believed to be a new, key technique to enhance the LEE of DUV-LEDs.

引用

页数：7

共 30 条

[1] Growth and applications of Group III nitrides [J].

Ambacher, O .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1998, 31 (20) :2653-2710

[2] Growth and Fabrication of High External Quantum Efficiency AlGaN-Based Deep Ultraviolet Light-Emitting Diode Grown on Pattern Si Substrate [J].

Binh Tinh Tran ;

Hirayama, Hideki .

SCIENTIFIC REPORTS, 2017, 7

[3] High-quality AlN template grown on a patterned Si(111) substrate [J].

Binh Tinh Tran ;

Hirayama, Hideki ;

Jo, Masafumi ;

Maeda, Noritoshi ;

Inoue, Daishi ;

Kikitsu, Tomoka .

JOURNAL OF CRYSTAL GROWTH, 2017, 468 :225-229

[4] Performance Improvement of AIN Crystal Quality Grown on Patterned Si(111) Substrate for Deep UV-LED Applications [J].

Binh Tinh Tran ;

Maeda, Noritoshi ;

Jo, Masafumi ;

Inoue, Daishi ;

Kikitsu, Tomoka ;

Hirayama, Hideki .

SCIENTIFIC REPORTS, 2016, 6

[5] Direct Growth and Controlled Coalescence of Thick AlN Template on Micro-circle Patterned Si Substrate [J].

Binh Tinh Tran ;

Hirayama, Hideki ;

Maeda, Noritoshi ;

Jo, Masafumi ;

Toyoda, Shiro ;

Kamata, Norihiko .

SCIENTIFIC REPORTS, 2015, 5

[6] Patterning of light-extraction nanostructures on sapphire substrates using nanoimprint and ICP etching with different masking materials [J].

Chen, Hao ;

Zhang, Qi ;

Chou, Stephen Y. .

NANOTECHNOLOGY, 2015, 26 (08)

[7] GaN as seen by the industry [J].

Duboz, JY .

COMPTES RENDUS DE L ACADEMIE DES SCIENCES SERIE IV PHYSIQUE ASTROPHYSIQUE, 2000, 1 (01) :71-80

[8] Fabrication of wafer-scale nanopatterned sapphire substrate by hybrid nanoimprint lithography [J].

Guo, Xu ;

Hu, Jing ;

Zhuang, Zhe ;

Deng, Mengmeng ;

Wu, Feixiang ;

Li, Xie ;

Liu, Bin ;

Yuan, Changsheng ;

Ge, Haixiong ;

Li, Feng ;

Chen, Yanfeng .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2014, 32 (06)

[9] Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes [J].

Hirayama, H .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (09)

[10] High-efficiency 350 nm-band quaternary InAlGaN-based UV-LED on GaN/sapphire template [J].

Hirayama, H ;

Kyono, T ;

Akita, K ;

Nakamura, T ;

Ishibashi, K .

Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7, 2005, 2 (07) :2899-2902

← 1 2 3 →